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About this paper
Haocong Luo, Ataberk Olgun, A. Giray Yağlıkçı, Yahya Can Tuğrul, Steve Rhyner, Meryem Banu Cavlak, Joël Lindegger, Mohammad Sadrosadati and 1 more
"RowPress," a new DRAM read-disturbance phenomenon, demonstrates that keeping a DRAM row open for an extended duration can induce bitflips in adjacent rows. Researchers at ETH Zürich characterized RowPress across 164 DDR4 chips from major manufacturers, showing it can reduce the activations needed for bitflips by up to 438x and bypass existing RowHammer protections.
Key insights
- RowPress is a distinct read-disturbance phenomenon, universally present across tested DDR4 chips, and fundamentally different from RowHammer and data retention failures in terms of affected cells, bitflip directionality, and temperature sensitivity.
- Prolonged row activation ("tAggON") significantly amplifies DRAM vulnerability, drastically reducing the number of activations required for bitflips, even to a single activation in extreme cases.
- Commodity systems are vulnerable to RowPress attacks, as existing memory controller policies can unintentionally prolong row open times, allowing user-level programs to induce bitflips even in the presence of in-DRAM RowHammer protections.
Summary by alphaXiv.
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