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About this paper
Madhav Vadlamani, Dyutimoy Chakraborty, Jianwei Jia, Halid Mulaosmanovic, Stefan Duenkel, Sven Beyer, Suman Datta, Shimeng Yu
The authors characterize foundry 28-nanometer ferroelectric nonvolatile capacitors and use calibrated device models to simulate a 128-by-128 charge-domain crossbar. Cooling from 290 K to 77 K raises simulated effective resolution, measured as ENOB, from 4.08 to 4.99 bits. Device tests also find narrower quasi-static memory windows but less high-capacitance-state decay under read stress at 77 K; array performance remains simulated.
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