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About this paper
Ju-Young Yoon, Nuno Cacoilo, Advait Madhavan, Jabez J. McClelland, Shun Kanai, Hideo Ohno, Shunsuke Fukami, William A. Borders
The authors integrate a superparamagnetic tunnel junction with 130-nm CMOS as a complete p-bit unit cell. Thermal fluctuations change junction resistance, and an electrical input tunes output statistics. Output voltage changes from 1.8 V to 0.45 V as bias rises from 0.5 V to 0.8 V, averaged over 200,000 samples; the low level misses intended 0 V.
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